مرکز منطقه ای اطلاع رساني علوم و فناوري - IRE Standards on Solid-State Devices: Measurement of Minority-Carrier Lifetime in Germanium and Silicon by the Method of Photoconductive Decay

DocumentCode :

984309

Title :

IRE Standards on Solid-State Devices: Measurement of Minority-Carrier Lifetime in Germanium and Silicon by the Method of Photoconductive Decay

Volume :

Issue :

fYear :

1961

Firstpage :

1292

Lastpage :

1299

Keywords :

Charge carrier lifetime; Germanium; Measurement standards; Particle measurements; Personnel; Photoconducting devices; Radiative recombination; Semiconductor device testing; Silicon; Solid state circuits;

fLanguage :

English

Journal_Title :

Proceedings of the IRE

Publisher :

ieee

ISSN :

0096-8390

Type :

jour

DOI :

10.1109/JRPROC.1961.287921

Filename :

4066489

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=984309