DocumentCode
984431
Title
CW operation of 1.5 ¿m GaInAsP/InP buried-heterostructure laser with a reactive-ion-etched facet
Author
Mikami, Osamu ; Akiya, H. ; Saitoh, Takashi ; Nakagome, Hideki
Author_Institution
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Volume
19
Issue
6
fYear
1983
Firstpage
213
Lastpage
215
Abstract
The reactive-ion-etching technique in forming facet mirrors for 1.5 ¿m GaInAs/InP buried-heterostructure (BH) lasers is reported. Room-temperature CW operation has been achieved with BH lasers having one of the facets formed by RIE and metallic coating and the other by cleaving. The laser with 330 ¿m long cavity has a 110 mA threshold.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; sputter etching; 1.5 microns wavelength; 110 mA threshold; BH laser; CW operation; GaInAsP/InP buried-heterostructure laser; cavity; cleaving; facet mirrors; metallic coating; reactive-ion-etched facet; reactive-ion-etching technique; semiconductor laser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830147
Filename
4247519
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