Title :
CW operation of 1.5 ¿m GaInAsP/InP buried-heterostructure laser with a reactive-ion-etched facet
Author :
Mikami, Osamu ; Akiya, H. ; Saitoh, Takashi ; Nakagome, Hideki
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
The reactive-ion-etching technique in forming facet mirrors for 1.5 ¿m GaInAs/InP buried-heterostructure (BH) lasers is reported. Room-temperature CW operation has been achieved with BH lasers having one of the facets formed by RIE and metallic coating and the other by cleaving. The laser with 330 ¿m long cavity has a 110 mA threshold.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; sputter etching; 1.5 microns wavelength; 110 mA threshold; BH laser; CW operation; GaInAsP/InP buried-heterostructure laser; cavity; cleaving; facet mirrors; metallic coating; reactive-ion-etched facet; reactive-ion-etching technique; semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830147
