Title :
Preserving InP surface corrugations for 1.3 ¿m GaInAsP/InP DFB lasers from thermal deformation during LPE process
Author :
Kinoshita, J. ; Okuda, H. ; Uematsu, Y.
Author_Institution :
Toshiba Corporation, Research & Development Center, Kawasaki, Japan
Abstract :
First-order InP surface corrugations for 1.3 ¿m distributed feedback (DFB) GaInAsP/InP lasers have been effectively preserved from thermal deformation that occurred during the soaking period just before LPE growth by employing a GaAs cover instead of a conventional InP cover. This technique has contributed greatly to GaInAsP/InP DFB laser reproducible fabrication.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor junction lasers; 1.3 microns wavelength; GaInAsP/InP DFB lasers; InP surface corrugations; LPE process; distributed feedback laser; semiconductor laser; thermal deformation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830148
