• DocumentCode
    984530
  • Title

    Ga0.47In0.53As/Al0.48In0.52As multiquantum-well LEDs emitting at 1.6 ¿m

  • Author

    Alavi, K. ; Pearsall, T.P. ; Forrest, Stephen R. ; Cho, Andrew Y.

  • Author_Institution
    Bell Laboratories, Murray Hill, USA
  • Volume
    19
  • Issue
    6
  • fYear
    1983
  • Firstpage
    227
  • Lastpage
    229
  • Abstract
    Edge-emitting diodes made from Ga0.47In0.53As and Al0.48In0.52As, grown lattice-matched on InP substrates by molecular beam epitaxy with room-temperature emission at 1.60 ¿m, are reported. A multiquantum-well structure is used to shift the emission by 54 meV from 0.73 eV toward higher energy.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; light emitting diodes; 1.6 microns wavelength; Ga0.47In0.53As/Al0.48In0.52 As; edge-emitting diodes; molecular beam epitaxy; multiquantum-well LEDs; room-temperature emission;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830157
  • Filename
    4247532
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=984530