Title :
Effect of annealing on the compensation temperature of RE-TM amorphous films
Author :
Shen, D.F. ; Matsushita, S. ; Sakurai, Y.
Author_Institution :
Osaka University, Osaka, Japan
fDate :
11/1/1981 12:00:00 AM
Abstract :
The effect of annealing on the compensation temperature of Gd-Co and Gd-Fe thin films, which are prepared by rf-sputtering without dc bias fields at low temperatures (100-150°C), were studied. It is found that the changes of Tcompin vacuum are faster than that in air. XPS studies showed that oxygen not only bonds preferentially to Gd atoms, but also reacts with the Co atoms (Fe atoms) in air annealing. The oxidation of Co atoms (Fe atoms) leads to a slow rate of change in Tcompafter annealing in air.
Keywords :
Amorphous magnetic films/devices; Magnetic films; Magnetic thermal factors; Amorphous materials; Annealing; Argon; Elementary particle vacuum; Etching; Hall effect; Hysteresis; Spectroscopy; Temperature; Voltage;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.1981.1061532
