A Q-band low phase noise monolithic AlGaN/GaN HEMT VCO

Author

Lan, Xing ; Wojtowicz, M. ; Smorchkova, I. ; Coffie, R. ; Tsai, R. ; Heying, B. ; Truong, M. ; Fong, F. ; Kintis, M. ; Namba, C. ; Oki, A. ; Wong, T.

Author_Institution

Northrop Grumman Corp., Redondo Beach, CA

Volume

16

Issue

7

fYear

2006

fDate

7/1/2006 12:00:00 AM

Firstpage

425

Lastpage

427

Abstract

A Q-band 40-GHz GaN monolithic microwave integrated circuit voltage controlled oscillator (VCO) based on AlGaN/GaN high electron mobility transistor technology has been demonstrated. The GaN VCO delivered an output power of +25dBm with phase noise of -92dBc/Hz at 100-KHz offset, and -120dBc/Hz at 1-MHz offset. To the best of our knowledge, this represents the state-of-the-art for GaN VCOs in terms of frequency, output power, and phase noise performance. This work demonstrates the potential for the use of GaN technology for high frequency, high power, and low phase noise frequency sources for military and commercial applications

Keywords

HEMT integrated circuits; III-V semiconductors; MIMIC; aluminium compounds; gallium compounds; integrated circuit noise; millimetre wave oscillators; phase noise; voltage-controlled oscillators; wide band gap semiconductors; 40 GHz; AlGaN-GaN; high electron mobility transistors; monolithic microwave integrated circuit; phase noise; voltage controlled oscillators; Aluminum gallium nitride; Frequency; Gallium nitride; HEMTs; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Phase noise; Power generation; Voltage-controlled oscillators; Gallium nitride; monolithic microwave integrated circuit (MMIC) oscillator; phase noise;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2006.877128

Filename

1644772