Title :
The Impact of Aging Effects and Manufacturing Variation on SRAM Soft-Error Rate
Author :
Cannon, Ethan H. ; KleinOsowski, A.J. ; Kanj, Rouwaida ; Reinhardt, Daniel D. ; Joshi, Rajiv V.
Author_Institution :
IBM Syst. & Technol. Group, Essex
fDate :
3/1/2008 12:00:00 AM
Abstract :
This paper describes modeling and hardware results of how the soft-error rate (SER) of a 65-nm silicon-on-insulator SRAM memory cell changes over time, as semiconductor aging effects shift the SRAM cell behavior. This paper also describes how the SER changes in the presence of systematic and random manufacturing variation.
Keywords :
SRAM chips; ageing; integrated circuit manufacture; silicon-on-insulator; SER; SRAM soft-error rate; manufacturing variation; semiconductor aging effects; silicon-on-insulator SRAM memory cell; size 65 nm; Critical charge (Qcrit); critical charge; radiation event; single event upset (SEU); soft error rate (SER); soft errors; soft-error rate (SER);
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2007.912983
