Title :
Stress tests on 1.3 ¿m buried-heterostructure laser diode
Author :
Ikegami, T. ; Takahei, K. ; Fukuda, M. ; Kuroiwa, K.
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Preliminary results of the accelerated aging test under stresses of temperature and current are presented. The degradation modes are found to be divided into two patterns which can be mapped in co-ordinates of these stresses.
Keywords :
ageing; life testing; semiconductor device testing; semiconductor junction lasers; 1.3 micron wavelength; accelerated aging test; buried-heterostructure laser diode; degradation modes; semiconductor laser; stress tests;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830197
