DocumentCode :
984949
Title :
Design and Fabrication of ZnO-Based FBAR Microwave Devices for Mobile WiMAX Applications
Author :
Mai, Linh ; Lee, Jae-young ; Pham, Van-Su ; Yoon, Giwan
Author_Institution :
Inf. & Commun. Univ., Daejeon
Volume :
17
Issue :
12
fYear :
2007
Firstpage :
867
Lastpage :
869
Abstract :
In this letter, we present the design and fabrication of a novel ZnO-based film bulk acoustic wave resonator (FBAR) microwave devices. The novel FBAR devices employ a new-type of Bragg reflector with very thin chromium (Cr) layer formed between SiO2 and W films. The Cr layer seems to enhance the adhesion between SiO2 and W layers. The novel FBAR devices show good return losses (S11) and high Q-factors at the frequency range of 2.7-3.0 GHz. This approach will be very helpful for mobile worldwide interoperability for microwave access applications.
Keywords :
WiMax; acoustic microwave devices; acoustic resonators; bulk acoustic wave devices; zinc compounds; Bragg reflector; FBAR microwave devices; ZnO; film bulk acoustic wave resonator microwave devices; mobile WiMAX; Acoustic waves; Adhesives; Chromium; Fabrication; Film bulk acoustic resonators; Frequency; Microwave devices; Optical films; Q factor; WiMAX; $Q$-factor; Bragg reflector; film bulk acoustic wave resonator (FBAR); resonator; return loss; worldwide interoperability for microwave access (WiMAX);
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2007.910495
Filename :
4385738
Link To Document :
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