• DocumentCode
    984961
  • Title

    Comparison of noise characteristics of Fabry-Perot-type and travelling-wave-type semiconductor laser amplifiers

  • Author

    Simon, J.C. ; Favennec, J.L. ; Charil, J.

  • Author_Institution
    CNET, LAB/MER/FOG, Lanmon, France
  • Volume
    19
  • Issue
    8
  • fYear
    1983
  • Firstpage
    288
  • Lastpage
    290
  • Abstract
    We report results of comparative noise measurements on AlGaAs semiconductor laser amplifiers of the Fabry-Perot and travelling-wave types. We show that, for the same net gain, the electrical baseband signal/noise ratio of a photodetector placed at the amplifier output (after an optical filter) is higher for a travelling-wave-type amplifier, especially at high-gain values where the Fabry-Perot amplifier is operated at oscillation threshold. For a net gain of 20.5 dB, the signal/noise ratio of the travelling-wave-type amplifier is 4¿5 dB better.
  • Keywords
    III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; semiconductor junction lasers; AlGaAs semiconductor laser amplifiers; Fabry-Perot type laser; electrical baseband signal/noise ratio; noise characteristics; photodetector; travelling-wave type laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830201
  • Filename
    4247592