Title :
GaAs/GaAlAs active-passive-interference laser
Author :
Choi, H.K. ; Wang, S.
Author_Institution :
University of California, Department of Electrical Engineering & Computer Sciences and the Electronics Research Laboratory, Berkeley, USA
Abstract :
A GaAs/GaAlAs interference laser with an active and a passive section is reported. A very clean single longitudinal mode is obtained and maintained without mode hopping over about 10°C, which results from the combined effect of interference and real index waveguiding in the lateral direction.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; semiconductor junction lasers; GaAs/GaAlAs interference laser; active section; longitudinal mode; passive section; real index waveguiding; semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830210
