• DocumentCode
    985061
  • Title

    A V-Band CMOS Injection-Locked Oscillator Using Fundamental Harmonic Injection

  • Author

    Huang, Fan-Hsiu ; Chan, Yi-Jen

  • Author_Institution
    Sch. of Nat. Central Univ., Chung-Li
  • Volume
    17
  • Issue
    12
  • fYear
    2007
  • Firstpage
    882
  • Lastpage
    884
  • Abstract
    A V-band CMOS injection-locked oscillator (ILO) based on a cross-coupled oscillator configuration containing nMOS and pMOS devices is implemented by using 0.18 mum CMOS process. This ILO has a free-running output frequency around 60 GHz while the double push-push technique was used as a frequency multiplier. It also has a wide output locking bandwidth of up to 3.64 GHz (from 59.36 to 63 GHz) as injecting a signal near 15 GHz with the fundamental injection-locked behavior. Controlling the output frequencies by the injected signals, the output signal has a phase noise of 108 dBc/Hz at a 1 MHz offset with consuming only 9.8 mW dc power under a 2 V supply.
  • Keywords
    CMOS integrated circuits; field effect MIMIC; frequency multipliers; injection locked oscillators; millimetre wave oscillators; phase noise; V-band CMOS injection-locked oscillator; bandwidth 3.64 GHz; cross-coupled oscillator; double push-push technique; frequency 59.36 GHz to 63 GHz; frequency multiplier; fundamental harmonic injection; injection-locked behavior; nMOS devices; pMOS devices; phase noise; power 9.8 mW; size 0.18 mum; voltage 2 V; CMOS process; Circuit topology; Frequency; Injection-locked oscillators; MOS devices; Millimeter wave radar; Millimeter wave technology; Phase locked loops; Phase noise; Voltage-controlled oscillators; 0.18 $mu$ m CMOS process; $V$-band injection-locked oscillator (ILO); Push–push technique;
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2007.910509
  • Filename
    4385750