DocumentCode :
985061
Title :
A V-Band CMOS Injection-Locked Oscillator Using Fundamental Harmonic Injection
Author :
Huang, Fan-Hsiu ; Chan, Yi-Jen
Author_Institution :
Sch. of Nat. Central Univ., Chung-Li
Volume :
17
Issue :
12
fYear :
2007
Firstpage :
882
Lastpage :
884
Abstract :
A V-band CMOS injection-locked oscillator (ILO) based on a cross-coupled oscillator configuration containing nMOS and pMOS devices is implemented by using 0.18 mum CMOS process. This ILO has a free-running output frequency around 60 GHz while the double push-push technique was used as a frequency multiplier. It also has a wide output locking bandwidth of up to 3.64 GHz (from 59.36 to 63 GHz) as injecting a signal near 15 GHz with the fundamental injection-locked behavior. Controlling the output frequencies by the injected signals, the output signal has a phase noise of 108 dBc/Hz at a 1 MHz offset with consuming only 9.8 mW dc power under a 2 V supply.
Keywords :
CMOS integrated circuits; field effect MIMIC; frequency multipliers; injection locked oscillators; millimetre wave oscillators; phase noise; V-band CMOS injection-locked oscillator; bandwidth 3.64 GHz; cross-coupled oscillator; double push-push technique; frequency 59.36 GHz to 63 GHz; frequency multiplier; fundamental harmonic injection; injection-locked behavior; nMOS devices; pMOS devices; phase noise; power 9.8 mW; size 0.18 mum; voltage 2 V; CMOS process; Circuit topology; Frequency; Injection-locked oscillators; MOS devices; Millimeter wave radar; Millimeter wave technology; Phase locked loops; Phase noise; Voltage-controlled oscillators; 0.18 $mu$ m CMOS process; $V$-band injection-locked oscillator (ILO); Push–push technique;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2007.910509
Filename :
4385750
Link To Document :
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