DocumentCode :
985081
Title :
A W-band Injection-Locked Frequency Divider Using GaAs pHEMTs and Cascode Circuit Topology
Author :
Huang, Fan-Hsiu ; Lin, Cheng-Kuo ; Wu, Yen-Shiang ; Wang, Yu-Chi ; Yi-Jen Chan
Author_Institution :
Sch. of Nat. Central Univ., Chungli
Volume :
17
Issue :
12
fYear :
2007
Firstpage :
885
Lastpage :
887
Abstract :
This study presents a W-band injection-locked frequency divider (ILFD) with a wide locking range characteristic by using 0.15 mum GaAs pHEMT techniques. Based on the cascode circuit topology, the oscillation and the injection parts can be designed individually without the trade-off between the input matching and the oscillation condition. Including with a characteristic of the active capacitance in this ILFD, a free-running oscillation frequency about 50 GHz was obtained with a frequency tuning function, in which the tuning range was about 1.2 GHz (50.5-49.3 GHz). By injecting a signal of around 100 GHz into this ILFD, the maximum locking range was measured up to 400 MHz, while the injected power was set to -5 dBm under a 3 V supply with a power consumption of 21 mW in the ILFD core.
Keywords :
HEMT integrated circuits; circuit tuning; field effect MIMIC; frequency dividers; gallium arsenide; injection locked oscillators; GaAs; ILFD; W-band injection-locked frequency divider; cascode circuit topology; free-running oscillation frequency; frequency 50 GHz; frequency tuning function; input matching; millimeter-wave circuit; pHEMT; power 21 mW; size 0.15 mum; Capacitance; Circuit optimization; Circuit topology; Frequency conversion; Gallium arsenide; Impedance matching; PHEMTs; Power measurement; Power supplies; Tuning; Cascode circuit topology; GaAs pHEMT; injection-locked frequency divider (ILFD);
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2007.910510
Filename :
4385751
Link To Document :
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