Title :
2.4/5.7 GHz Dual-Band High Linearity Gilbert Upconverter Utilizing Bias-Offset TCA and LC Current Combiner
Author :
Syu, Jin-Siang ; Meng, Chinchun
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
Abstract :
A 2.4/5.7 GHz dual-band Gilbert upconversion mixer is demonstrated using 0.35 mum SiGe BiCMOS technology. A bias-offset cross-coupled transconductance amplifier (TCA) is employed in the intermediate frequency port for the linearity improvement. The dual-band LC current combiner and the output shunt-shunt feedback buffer amplifier are in the radio frequency (RF) port. The mechanisms of the high linearity upconverter and the design flow of the dual-band LC current combiner are established in this letter. The dual-band upconverter has conversion gain of 1.5/-0.2 dB, OP1dB, and of -10.5/-9 dBm, and OIP3 of 12/13 dBm for IF=100 MHz, RF 2.4/5.7 GHz, respectively.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; microwave integrated circuits; microwave mixers; operational amplifiers; Gilbert upconversion mixer; LC current combiner; SiGe; SiGe BiCMOS technology; bias-offset TCA; cross-coupled transconductance amplifier; dual-band high linearity Gilbert upconverter; frequency 2.4 GHz; frequency 5.7 GHz; heterojunction bipolar transistor; radio frequency port; shunt-shunt feedback buffer amplifier; size 0.35 mum; BiCMOS integrated circuits; Dual band; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Output feedback; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Transconductance; $LC$ current combiner; Dual-band; Gilbert mixer; SiGe heterojunction bipolar transistor (HBT); WLAN; shunt–shunt feedback; transconductance amplifier (TCA);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2007.910504
