Title :
Integral packaging for millimetre-wave GaAs IMPATT diodes prepared by molecular beam epitaxy
Author :
Bayraktaroglu, B. ; Shih, H.D.
Author_Institution :
Texas Instruments Incorporated, Central Research Laboratories, Dallas, USA
Abstract :
A novel `integrating packaging¿ technique was developed to package high-frequency, double-drift GaAs diodes fabricated from wafers prepared by molecular beam epitaxy (MBE). All devices were tested in microstrip resonator circuits. CW and pulse oscillations up to 109 GHz were obtained.
Keywords :
III-V semiconductors; IMPATT diodes; gallium arsenide; molecular beam epitaxial growth; packaging; semiconductor growth; solid-state microwave devices; CW oscillations; GaAs impatt diodes; MBE; double drift diodes; frequency 109 GHz; integral packaging; microstrip resonator circuits; mm-wave diodes; molecular beam epitaxy; pulse oscillations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830226
