• DocumentCode
    985226
  • Title

    Very low threshold GaInAsP/InP double-heterostructure lasers grown by LP MOCVD

  • Author

    Razeghi, M. ; Hersee, S. ; Hirtz, P. ; Blondeau, R. ; de Cremoux, B. ; Duchemin, J.P.

  • Author_Institution
    Thomson-CSF, Laboratoire Central de Recherches, Orsay, France
  • Volume
    19
  • Issue
    9
  • fYear
    1983
  • Firstpage
    336
  • Lastpage
    337
  • Abstract
    Room-temperature GaInAsP/InP DH lasers emitting at 1.3 ¿m and having very low threshold current densities have been grown by LP MOCVD. Thresholds were lower than the best values reported for comparable devices grown by LPE, the lowest threshold being 430 A/cm2 for a cavity length of 950 ¿m (width 150 ¿m) with an active-layer thickness of d = 2200 A.
  • Keywords
    III-V semiconductors; chemical vapour deposition; gallium arsenide; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; GaInAsP/InP DH lasers; LP MOCVD; VPE; emission wavelength 1.3 micron; low threshold current densities; threshold 430 Angstrom/cm2;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830232
  • Filename
    4247671
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=985226