Title :
Effect of oxide thickness on the properties of metal-insulator-organic semiconductor photovoltaic cells
Author :
Nevin, W. Andrew ; Chamberlain, Geoffrey Alan
Author_Institution :
Dept. of Electr. & Electron. Eng., Trent Polytech., Nottingham, UK
fDate :
1/1/1993 12:00:00 AM
Abstract :
The dependence of the dark and photovoltaic characteristics of metal-insulator-semiconductor (MIS) devices of the structure Al/Al-oxide/TPP/Au (TPP=tetraphenylporphyrin) on the thickness of the interfacial-oxide layer is described. Iodine-doped MgTPP devices show a variation of open-circuit photovoltage, short-circuit photocurrent, fill factor, power conversion efficiency, and capacitance with Al-oxide thickness, in a manner similar to inorganic MIS structures. An optimum oxide thickness of around 2 μm is observed for highest photovoltaic efficiency. The properties of oxygen/water vapor-doped ZnTPP and H2 TPP cells appear dependent upon the extent of oxide growth on the aluminum electrode during the doping process
Keywords :
aluminium; gold; metal-insulator-semiconductor devices; photovoltaic cells; Al/Al-oxide/TPP/Au; capacitance; doping process; fill factor; interfacial-oxide layer; metal-insulator-organic semiconductor photovoltaic cells; open-circuit photovoltage; oxide growth; oxide thickness; photovoltaic characteristics; photovoltaic efficiency; power conversion efficiency; short-circuit photocurrent; tetraphenylporphyrin; Aluminum; Capacitance; Electrodes; Gold; Metal-insulator structures; Photoconductivity; Photovoltaic systems; Power conversion; Solar power generation; Water;
Journal_Title :
Electron Devices, IEEE Transactions on
