Title :
Device linearity comparison of uniformly doped and δ-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs
Author :
Lin, Y.C. ; Chang, Edward Yi ; Yamaguchi, H. ; Hirayama, Y. ; Chang, X.Y. ; Chang, C.Y.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
7/1/2006 12:00:00 AM
Abstract :
The uniformly doped and the δ-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic high-electron mobility transistors (MHEMTs) were fabricated, and the dc characteristics and the third-order intercept point (IP3) of these devices were measured and compared. Due to more uniform electron distribution in the quantum-well region, the uniformly doped MHEMT exhibits a flatter transconductance (Gm) versus drain-to-source current (IDS) curve and much better linearity with higher IP3 and higher IP3-to-Pdc ratio as compared to the δ-doped MHEMT, even though the δ-doped device exhibits higher peak transconductance. As a result, the uniformly doped MHEMT is more suitable for communication systems that require high linearity operation.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; quantum well devices; semiconductor device testing; semiconductor doping; In0.52Al0.48As-In0.6Ga0.4As; communication systems; device linearity comparison; drain-to-source current; electron distribution; flatter transconductance; high linearity operation; metamorphic high-electron mobility transistors; quantum-well region; third-order intercept point; uniformly doped MHEMT; Doping; Electrons; Etching; HEMTs; Linearity; MODFETs; Molecular beam epitaxial growth; Ohmic contacts; Transconductance; mHEMTs; linearity; metamorphic high-electron mobility transistor (MHEMT); uniformly doped MHEMT;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.877307
