Characterization of Pt-Ru binary alloy thin films for work function tuning

Author

Todi, R.M. ; Warren, A.P. ; Sundaram, K.B. ; Barmak, K. ; Coffey, K.R.

Author_Institution

Univ. of Central Florida, Orlando, FL, USA

Volume

27

Issue

7

fYear

2006

fDate

7/1/2006 12:00:00 AM

Firstpage

542

Lastpage

545

Abstract

This letter describes materials and electrical characterization of Pt-Ru binary alloy metal gate electrodes for control of the electrode work function. The work function of the Pt-Ru binary alloy system can be tuned over a wide range of 4.8-5.2 eV. The results indicate that the change of film properties, i.e., resistivity, work function, and crystal structure, with composition is consistent with the equilibrium phase diagram and that the work function in the face-centered cubic and hexagonal close-packed single-phase regions is only weakly dependent on composition, whereas a strong dependence is observed in the intermediate compositional range.

Keywords

electrodes; metallic thin films; phase diagrams; platinum alloys; ruthenium alloys; work function; 4.8 to 5.2 eV; PtRu; binary alloy thin films; equilibrium phase diagram; metal gate electrodes; work function tuning; Annealing; Argon; Electrodes; Grain size; Inorganic materials; MOS devices; Platinum alloys; Silicon; Transistors; Tuning; Gate electrode; metal alloy; platinum–ruthenium (Pt–Ru); work function;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.876326

Filename

1644821