Unified quasi-static MOSFET capacitance model

Author

Rho, Kwang-Myoung ; Lee, Kwyro ; Shur, Michael ; Fjeldly, Tor A.

Author_Institution

Hyundai Electronics Industries Co. Ltd., Kyoungki, South Korea

Volume

40

Issue

1

fYear

1993

fDate

1/1/1993 12:00:00 AM

Firstpage

131

Lastpage

136

Abstract

An accurate calculation of MOSFET capacitance-voltage (C V) characteristics has to account for the bulk charge which is affected by nonuniform doping profiles and short-channel effects. In an approach based on the unified charge control model (UCCM), the voltage dependencies of the bulk charge are related to the standard parameters of the body plots which are routinely measured during MOSFET characterization. The results of the C-V calculations based on this model are in good agreement with experimental data and calculations based on the standard BSIM model. Compared to the BSIM simulations, the present model more accurately describes capacitances related to the bulk charge and the device subthreshold behavior, and it is suitable for incorporation into circuit simulators

Keywords

capacitance; insulated gate field effect transistors; semiconductor device models; C-V calculations; MOSFET; bulk charge; capacitance model; capacitance-voltage characteristics; circuit simulators; device subthreshold behavior; nonuniform doping profiles; short-channel effects; unified charge control model; unified quasistatic model; voltage dependencies; Capacitance; Capacitance-voltage characteristics; Charge measurement; Circuit simulation; Current measurement; Doping profiles; MOSFET circuits; Measurement standards; Semiconductor process modeling; Voltage control;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.249435

Filename

249435