Title :
(GaAl)As/GaAs heterojunction bipolar transistors with graded composition in the base
Author :
Miller, Douglas L. ; Asbeck, P.M. ; Anderson, R.J. ; Eisen, F.H.
Author_Institution :
Rockwell International, Microelectronics Research & Development Center, Thousand Oaks, USA
Abstract :
The first fabrication and high-speed operation of a three-terminal (AlGa)As/GaAs heterojunction bipolar transistor with graded bandgap base is reported. Cutoff frequencies up to 16 GHz have been achieved in devices fabricated from material made by molecular beam epitaxy. This work demonstrates the feasibility of using a graded (AlGa)As base to enhance the speed of heterojunction bipolar transistors.
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; p-n heterojunctions; (GaAl)As/GaAs heterojunction bipolar transistors; 16 GHz cutoff frequency; III-V semiconductors; MBE; fabrication; graded bandgap base; graded base composition; high speed operation; molecular beam epitaxy; semiconductor technology; three terminal device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830254
