Three-mask polycrystalline silicon TFT with metallic gate and junctions

Author

Zhang, Dongli ; Wong, Man

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China

Volume

27

Issue

7

fYear

2006

fDate

7/1/2006 12:00:00 AM

Firstpage

564

Lastpage

566

Abstract

Polycrystalline silicon thin-film transistors (TFTs) with metallic gates and junctions realized using a three-mask metal-replaced junction (MERJ) technology have been fabricated and characterized. Compared to those of a conventional TFT, the process of making a MERJ TFT is simplified, and the resistance of the junctions and gate is reduced. The low resistance of the metallic junctions allows a greater recovery of the intrinsic characteristics of a MERJ TFT, and the reduced signal delay on a low-resistance metallic gate line makes the TFT particularly suitable for realizing large-area active-matrix flat-panel displays.

Keywords

elemental semiconductors; field effect transistors; flat panel displays; semiconductor junctions; silicon; thin film transistors; MERJ TFT; MERJ technology; Si; active-matrix flat-panel displays; metal-replaced junction technology; metallic gate; metallic junctions; signal delay; thin-film transistors; three-mask polycrystalline silicon; Active matrix technology; Delay; Displays; Driver circuits; Fabrication; Glass; Iron; Silicon; Switches; Thin film transistors; Aluminum (Al); flat-panel display; metal gate; metal-replaced junction (MERJ); polycrystalline silicon (poly-Si); thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.876309

Filename

1644828