Title :
Three-mask polycrystalline silicon TFT with metallic gate and junctions
Author :
Zhang, Dongli ; Wong, Man
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
fDate :
7/1/2006 12:00:00 AM
Abstract :
Polycrystalline silicon thin-film transistors (TFTs) with metallic gates and junctions realized using a three-mask metal-replaced junction (MERJ) technology have been fabricated and characterized. Compared to those of a conventional TFT, the process of making a MERJ TFT is simplified, and the resistance of the junctions and gate is reduced. The low resistance of the metallic junctions allows a greater recovery of the intrinsic characteristics of a MERJ TFT, and the reduced signal delay on a low-resistance metallic gate line makes the TFT particularly suitable for realizing large-area active-matrix flat-panel displays.
Keywords :
elemental semiconductors; field effect transistors; flat panel displays; semiconductor junctions; silicon; thin film transistors; MERJ TFT; MERJ technology; Si; active-matrix flat-panel displays; metal-replaced junction technology; metallic gate; metallic junctions; signal delay; thin-film transistors; three-mask polycrystalline silicon; Active matrix technology; Delay; Displays; Driver circuits; Fabrication; Glass; Iron; Silicon; Switches; Thin film transistors; Aluminum (Al); flat-panel display; metal gate; metal-replaced junction (MERJ); polycrystalline silicon (poly-Si); thin-film transistor (TFT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.876309
