Half-terahertz operation of SiGe HBTs

Author

Krithivasan, R. ; Yuan Lu ; Cressler, J.D. ; Jae-Sung Rieh ; Khater, M.H. ; Ahlgren, D. ; Freeman, G.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

27

Issue

7

fYear

2006

fDate

7/1/2006 12:00:00 AM

Firstpage

567

Lastpage

569

Abstract

This letter presents the first demonstration of a silicon-germanium heterojunction bipolar transistor (SiGe HBT) capable of operation above the one-half terahertz (500 GHz) frequency. An extracted peak unity gain cutoff frequency (f_T) of 510 GHz at 4.5 K was measured for a 0.12×1.0 μm² SiGe HBT (352 GHz at 300 K) at a breakdown voltage BV/sub CEO/ of 1.36 V (1.47 V at 300 K), yielding an f_T×BV/sub CEO/ product of 693.6 GHz-V at 4.5 K (517.4 GHz-V at 300 K).

Keywords

Ge-Si alloys; frequency response; heterojunction bipolar transistors; semiconductor device breakdown; submillimetre wave transistors; 1.36 V; 1.47 V; 300 K; 352 GHz; 4.5 K; 500 GHz; 510 GHz; 517.4 GHz; 693.6 GHz; SiGe; frequency response; half-terahertz operation; heterojunction bipolar transistor; silicon-germanium HBT; Cutoff frequency; Frequency measurement; Frequency response; Gain measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Prototypes; Silicon germanium; Space technology; Submillimeter wave measurements; Cryogenic temperatures; SiGe HBT; frequency response; heterojunction bipolar transistor (HBT); silicon–germanium (SiGe); terahertz;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.876298

Filename

1644829