Title :
Use of a 252Cf source in cosmic ray simulation studies on CMOS memories
Author :
Sanderson, T.K. ; Mapper, D. ; Stephen, J.H. ; Farren, J.
Author_Institution :
AERE, Instrumentation and Applied Physics Division, Didcot, UK
Abstract :
A laboratory 252Cf source has been found to provide a convenient and satisfactory technique for evaluating the susceptibility of VLSI static RAMs to cosmic-ray-induced single-event upsets. The calibration and use of the system are described, and results for some commercial CMOS RAMs are presented.
Keywords :
californium; cosmic ray effects and interactions; errors; field effect integrated circuits; integrated circuit testing; integrated memory circuits; large scale integration; random-access storage; simulation; 252Cf source; CMOS memories; IC testing; VLSI; calibration; cosmic ray simulation studies; single event errors; soft errors; static RAM;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830258
