• DocumentCode
    985482
  • Title

    Use of a 252Cf source in cosmic ray simulation studies on CMOS memories

  • Author

    Sanderson, T.K. ; Mapper, D. ; Stephen, J.H. ; Farren, J.

  • Author_Institution
    AERE, Instrumentation and Applied Physics Division, Didcot, UK
  • Volume
    19
  • Issue
    10
  • fYear
    1983
  • Firstpage
    373
  • Lastpage
    374
  • Abstract
    A laboratory 252Cf source has been found to provide a convenient and satisfactory technique for evaluating the susceptibility of VLSI static RAMs to cosmic-ray-induced single-event upsets. The calibration and use of the system are described, and results for some commercial CMOS RAMs are presented.
  • Keywords
    californium; cosmic ray effects and interactions; errors; field effect integrated circuits; integrated circuit testing; integrated memory circuits; large scale integration; random-access storage; simulation; 252Cf source; CMOS memories; IC testing; VLSI; calibration; cosmic ray simulation studies; single event errors; soft errors; static RAM;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830258
  • Filename
    4247706
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=985482