Title :
Enhanced crystallization and improved reliability for low-temperature-processed poly-Si TFTs with NH3-plasma pretreatment before crystallization
Author :
Fan, Ching-Lin ; Lai, Hui-Lung ; Yang, Tsung-Hsien
Author_Institution :
Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
fDate :
7/1/2006 12:00:00 AM
Abstract :
NH3-plasma pretreatment before crystallization was performed for the first time on low-temperature-processed poly-Si thin-film transistors (TFTs). TFTs after pretreatment can significantly reduce the thermal crystallization time of amorphous silicon from 24 to 4 h. The pretreatment can also improve device performance and hot-carrier resistivity. It was attributed to the defect-state passivation of nitrogen that is piled-up near the poly-Si film surface, which helps to terminate the dangling bonds in poly-Si thin film in place of weaker Si-H and/or Si-Si bonds. This new scheme provides a simple and effective method to decrease α-Si film crystallization time and simultaneously improve device performance and reliability.
Keywords :
amorphous semiconductors; crystallisation; low-temperature techniques; passivation; plasma materials processing; semiconductor device reliability; silicon; thin film transistors; NH3 plasma; Si; amorphous silicon; dangling bonds; defect state passivation; hot carrier resistivity; low temperature process; plasma treatment; semiconductor device reliability; thermal crystallization; thin film transistors; Annealing; Crystallization; Hydrogen; Nitrogen; Passivation; Plasma density; Plasma devices; Plasma displays; Plasma temperature; Thin film transistors; Enhanced crystallization; reliability; thin-film transistors (TFTs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.877296
