DocumentCode
985512
Title
A study of interband tunneling under nonuniform electric field
Author
Chakraborty, Paritosh Kumar
Author_Institution
Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
Volume
40
Issue
1
fYear
1993
fDate
1/1/1993 12:00:00 AM
Firstpage
214
Lastpage
219
Abstract
An attempt is made to find the interband funneling rate in semiconductor devices (such as MOSFET, p-n tunnel diodes, etc.) in the presence of an electric field where the electric field in the tunneling region varies linearly with the space coordinate. The analysis offers interband tunneling current for a two-band, single-electron model using crystal momentum representation techniques. The evaluation of tunneling rate is more general than that recently reported by M. Takayanagi and S. Iwabuchi (1991)
Keywords
electric fields; semiconductor device models; tunnelling; MOSFET; crystal momentum representation; electric field; interband tunneling; nonuniform electric field; p-n tunnel diodes; semiconductor devices; single-electron model; tunneling current; tunneling rate; two-band model; Breakdown voltage; Differential equations; FETs; MOSFET circuits; Nonuniform electric fields; Schrodinger equation; Semiconductor devices; Semiconductor diodes; Tunneling; Wave functions;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.249446
Filename
249446
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