Title :
Oxide-silicon-oxide buffer structure for ultralow temperature polycrystalline silicon thin-film transistor on plastic substrate
Author :
Kim, Yong-Hae ; Chung, Choong-Heui ; Moon, Jaehyun ; Kim, Gi Heon ; Park, Dong-Jin ; Kim, Dae-Won ; Lim, Jung Wook ; Yun, Sun Jin ; Song, Yoon-Ho ; Lee, Jin Ho
Author_Institution :
Basic Res. Lab., Korea Electron. & Telecommun. Res. Inst., Daejeon, South Korea
fDate :
7/1/2006 12:00:00 AM
Abstract :
A novel oxide-silicon-oxide buffer structure to prevent damage to a plastic substrate in an ultralow temperature (<120°C) polycrystalline silicon thin-film transistor (ULTPS TFT) process is presented. Specifically, an amorphous silicon film was inserted as an absorption layer into buffer oxide films. The maximum endurable laser energy was increased from 200 to 800 mJ/cm2. The fabricated ULTPS nMOS TFT showed a performance with mobility of 30 cm2/Vs.
Keywords :
amorphous semiconductors; buffer circuits; elemental semiconductors; semiconductor-insulator boundaries; silicon; thin film transistors; absorption layer; amorphous silicon film; buffer oxide films; oxide silicon oxide buffer structure; plastic substrate; thin film transistor; ultralow temperature polycrystalline silicon; Absorption; Dielectric substrates; Displays; Inorganic materials; MOS devices; Plasma temperature; Plastics; Semiconductor films; Silicon; Thin film transistors; Buffer; flat-panel display; polycrystalline silicon (poly-Si); thin-film transistor (TFT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.877713
