Title :
Design modeling of high-efficiency p+-n indium phosphide solar cells
Author :
Jain, Raj K. ; Flood, Dennis J.
Author_Institution :
NASA Lewis Res. Center, Cleveland, OH, USA
fDate :
1/1/1993 12:00:00 AM
Abstract :
A parametric study of p+-n indium phosphide solar cells has been conducted using the PC-1D computer program. The effect of base doping on cell efficiency has been studied, and it is found that cell efficiency is a maximum for impurity concentrations around 1017 cm-3. The variation of minority-carrier diffusion length as a function of base doping has been included. Using realistic values of electronic and material parameters, cell efficiencies in excess of 24% AM0 (25°C) are predicted
Keywords :
III-V semiconductors; carrier lifetime; electronic engineering computing; impurity distribution; indium compounds; minority carriers; semiconductor device models; semiconductor doping; solar cells; 24 percent; PC-1D computer program; base doping; cell efficiency; design modelling; high-efficiency; impurity concentrations; minority-carrier diffusion length; p+-n device; solar cells; Bandwidth; Circuit simulation; Electrical resistance measurement; Electrons; Frequency; Gallium arsenide; Geometry; Indium phosphide; Photovoltaic cells; Semiconductor device modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
