Title :
Injection current model of a MOS diode under charge-sharing mode readout operation
Author :
Wu, Chao-Wen ; Lin, Hao-Hsiung
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
1/1/1993 12:00:00 AM
Abstract :
Based on the Shockley diffusion theory, an injection current model for the metal-oxide-semiconductor (MOS) charge injection device (CID) under charge-sharing mode readout scheme is proposed. It is found that the relation of the injection current and the surface potential follows the ideal diode equation. A photocurrent method is developed to verify the model and the extracted ideality factor is very close to unity. An equivalent SPICE model of the MOS diode is derived and the simulated transient readout response fits the experimental data quite well
Keywords :
SPICE; metal-insulator-semiconductor devices; semiconductor device models; semiconductor diodes; transient response; MOS diode; Shockley diffusion theory; charge-sharing mode; equivalent SPICE model; ideal diode equation; ideality factor; injection current model; metal-oxide-semiconductor; photocurrent method; readout operation; simulated transient readout response; surface potential; Chaos; Charge carrier processes; Charge coupled devices; Charge transfer; Electrons; Equations; MOS capacitors; Potential well; SPICE; Semiconductor diodes;
Journal_Title :
Electron Devices, IEEE Transactions on
