Title :
Non-quasi-static transient and small-signal two-dimensional modeling of GaAs MESFET´s with emphasis on distributed effects
Author :
Akhtar, Salman ; Tiwari, Sandip
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
fDate :
12/1/1993 12:00:00 AM
Abstract :
The operation of micron and submicron GaAs MESFETs under high-speed transient and high-frequency small-signal conditions is analyzed using a two-dimensional model. The effects of displacement currents, dipole due to negative differential mobility or current continuity, and two-dimensional transport are emphasized. The origin of delay effects, such as the phase delay incorporated in small-signal models, is explored in order to relate it to the behavior under switching conditions. Broadband expressions for the extraction of a complete small-signal model are presented. Using the expressions derived, the variation of model elements with frequency and the effect of this on the unilateral gain of the device are studied
Keywords :
III-V semiconductors; Schottky gate field effect transistors; carrier mobility; delays; equivalent circuits; gallium arsenide; negative resistance; semiconductor device models; solid-state microwave devices; transient response; GaAs; broadband expressions; channel electron density; current continuity; displacement currents; high-frequency small-signal conditions; negative differential mobility; nonquasistatic transient model; phase delay; small-signal two-dimensional model; submicron GaAs MESFETs; switching conditions; two-dimensional model; two-dimensional transport; unilateral gain; Capacitance; Delay effects; Equivalent circuits; FETs; Frequency; Gallium arsenide; Geometry; MESFETs; Solid modeling; Transient analysis;
Journal_Title :
Electron Devices, IEEE Transactions on
