Title :
Temporal and spectral characteristics of rapidly gain-switched GaAs/GaAlAs buried-heterostructure lasers
Author :
Veith, G. ; Kuhl ; G¿¿bel, E.O.
Author_Institution :
Max-Planck-Institut fÿr Festkörperforschung, Stuttgart, West Germany
Abstract :
The temporal and spectral output of GaAs/GaAlAs buried-heterostructure lasers under excitation with 60 ps electrical pulses is investigated for different DC bias conditions. Optical pulses comparable in width to the electrical pulses can be obtained only if the DC bias is below or close to threshold, where multimode emission is observed. For DC bias well above threshold the laser remains single-mode; however, the optical pulses are considerably broadened.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; p-n heterojunctions; semiconductor junction lasers; DC bias conditions; GaAs/GaAlAs buried-heterostructure lasers; III-V semiconductors; bias threshold; electric pulse excitation; multimode emission; optical pulse broadening; rapid gain switching; semiconductor laser; single-mode; spectral characteristics; temporal characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830267
