MOSFET hot-carrier reliability improvement by forward-body bias

Author

Hokazono, Akira ; Balasubramanian, Sriram ; Ishimaru, Kazunari ; Ishiuchi, Hidemi ; Hu, Chenming ; Liu, Tsu-Jae King

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

27

Issue

7

fYear

2006

fDate

7/1/2006 12:00:00 AM

Firstpage

605

Lastpage

608

Abstract

Active threshold voltage V_TH control via well-substrate biasing can be utilized to satisfy International Roadmap for Semiconductors performance and standby power requirements for CMOS technology beyond the hp65-nm node. In this letter, the impact of substrate bias V_SUB on hot-carrier reliability is presented. The impact varies with the gate length and body effect factor. These findings are explained, and the effects of future scaling are discussed using a quasi-two-dimensional model. Significant and important improvement in hot-carrier lifetime with forward-bias V_SUB can be expected for deeply scaled CMOS devices, making it an attractive method for extending the scalability of bulk-Si transistor technology.

Keywords

MOSFET; hot carriers; semiconductor device models; semiconductor device reliability; silicon; CMOS technology; MOSFET; Si; active threshold voltage; body effect factor; forward-body bias; gate length; hot-carrier lifetime; hot-carrier reliability; well-substrate biasing; CMOS technology; Degradation; Hot carriers; MOS devices; MOSFET circuits; Research and development; Scalability; Substrates; Threshold voltage; Voltage control; Forward-body bias; MOSFET; hot-carrier reliability; reverse-body bias; substrate bias;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.877306

Filename

1644841