DocumentCode
985619
Title
High-gain low-noise GaAlAs-GaAs phototransistors
Author
Scavennec, A. ; Ankri, D. ; Besombes, C. ; Courbet, C. ; Riou, J. ; Héliot, F.
Author_Institution
Centre National d´´Etudes des Télécommunications, Départment PMS/TPC, Bagneux, France
Volume
19
Issue
10
fYear
1983
Firstpage
394
Lastpage
395
Abstract
GaAlAs-GaAs heterojunction phototransistors designed for a high sensitivity have been fabricated. Very large current gains have been observed (over 104), together with moderate input capacitances (about 5 pF). With these figures bipolar phototransistors appear as real candidates for low-noise large-bandwidth optical receivers; from signal/noise measurements on large devices, a minimum detectable power of ¿34.5 dBm at 0.82 ¿m was evaluated for a 140 Mbit/s data rate
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; optical communication equipment; p-n heterojunctions; phototransistors; 0.82 micron; 140 Mbit/s data rate; GaAlAs-GaAs phototransistors; III-V semiconductors; current gains; heterojunction; input capacitances; low noise bipolar device; minimum detectable power; optical receivers; semiconductor device fabrication; signal/noise measurements;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830272
Filename
4247727
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