Title :
High-gain low-noise GaAlAs-GaAs phototransistors
Author :
Scavennec, A. ; Ankri, D. ; Besombes, C. ; Courbet, C. ; Riou, J. ; Héliot, F.
Author_Institution :
Centre National d´´Etudes des Télécommunications, Départment PMS/TPC, Bagneux, France
Abstract :
GaAlAs-GaAs heterojunction phototransistors designed for a high sensitivity have been fabricated. Very large current gains have been observed (over 104), together with moderate input capacitances (about 5 pF). With these figures bipolar phototransistors appear as real candidates for low-noise large-bandwidth optical receivers; from signal/noise measurements on large devices, a minimum detectable power of ¿34.5 dBm at 0.82 ¿m was evaluated for a 140 Mbit/s data rate
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical communication equipment; p-n heterojunctions; phototransistors; 0.82 micron; 140 Mbit/s data rate; GaAlAs-GaAs phototransistors; III-V semiconductors; current gains; heterojunction; input capacitances; low noise bipolar device; minimum detectable power; optical receivers; semiconductor device fabrication; signal/noise measurements;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830272
