Title :
Delta-doping interband tunneling diode by metal-organic chemical vapor deposition
Author :
Su, Yan-Kuin ; Wang, Ruey-Lue ; Tsai, Hann-Huei
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
12/1/1993 12:00:00 AM
Abstract :
A delta-doped InGaAs-GaAs quantum well (QW) has been grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The full width at half maximum (FWHM) of the doping profile analyzed by capacitance-voltage measurements is less than 30 A and is comparable to those produced by molecular beam epitaxy (MBE) or chemical beam epitaxy (CBE). Two kinds of delta-doping interband tunneling diodes with band diagrams similar to those of InAs/AlSb-GaSb related interband tunneling diodes have been fabricated
Keywords :
III-V semiconductors; doping profiles; gallium arsenide; indium compounds; negative resistance; semiconductor doping; semiconductor growth; semiconductor quantum wells; tunnel diodes; vapour phase epitaxial growth; InGaAs-GaAs; InGaAs-GaAs quantum well; LP-MOCVD; capacitance-voltage measurements; chemical vapor deposition; delta-doping; doping profile; interband tunneling; low-pressure MOCVD; metal-organic CVD; tunnel diodes; Capacitance measurement; Capacitance-voltage characteristics; Chemical analysis; Chemical vapor deposition; Diodes; Doping profiles; Molecular beam applications; Molecular beam epitaxial growth; Molecular beams; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
