Delta-doping interband tunneling diode by metal-organic chemical vapor deposition

Author

Su, Yan-Kuin ; Wang, Ruey-Lue ; Tsai, Hann-Huei

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

40

Issue

12

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

2192

Lastpage

2198

Abstract

A delta-doped InGaAs-GaAs quantum well (QW) has been grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The full width at half maximum (FWHM) of the doping profile analyzed by capacitance-voltage measurements is less than 30 A and is comparable to those produced by molecular beam epitaxy (MBE) or chemical beam epitaxy (CBE). Two kinds of delta-doping interband tunneling diodes with band diagrams similar to those of InAs/AlSb-GaSb related interband tunneling diodes have been fabricated

Keywords

III-V semiconductors; doping profiles; gallium arsenide; indium compounds; negative resistance; semiconductor doping; semiconductor growth; semiconductor quantum wells; tunnel diodes; vapour phase epitaxial growth; InGaAs-GaAs; InGaAs-GaAs quantum well; LP-MOCVD; capacitance-voltage measurements; chemical vapor deposition; delta-doping; doping profile; interband tunneling; low-pressure MOCVD; metal-organic CVD; tunnel diodes; Capacitance measurement; Capacitance-voltage characteristics; Chemical analysis; Chemical vapor deposition; Diodes; Doping profiles; Molecular beam applications; Molecular beam epitaxial growth; Molecular beams; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.249464

Filename

249464