Impact of strained-silicon-on-insulator (sSOI) substrate on FinFET mobility

Author

Xiong, W. ; Cleavelin, C. Rinn ; Kohli, P. ; Huffman, C. ; Schulz, T. ; Schruefer, K. ; Gebara, G. ; Mathews, K. ; Patruno, P. ; Le Vaillant, Yves-Matthieu ; Cayrefourcq, I. ; Kennard, M. ; Mazure, C. ; Shin, K. ; Liu, T. J King

Author_Institution

Silicon Technol. Dev., Texas Instrum. Inc., Dallas, TX, USA

Volume

27

Issue

7

fYear

2006

fDate

7/1/2006 12:00:00 AM

Firstpage

612

Lastpage

614

Abstract

In this letter, it is shown that for fin widths down to < 20 nm, strain can be retained in patterned strained-silicon-on-insulator (sSOI) films and is correlated to mobility enhancements observed in FinFET devices. NMOS FinFET mobility is improved by 60% and 30% for [110]/<110> and (100)/<100> fin surface/direction, respectively. Although PMOS FinFET mobility is degraded by 35% for [110]/<110> fins, it is enhanced by up to 30% for (100)/<100> fins. These results can be qualitatively explained using the bulk-Si piezoresistance coefficients.

Keywords

MOSFET; carrier mobility; silicon-on-insulator; FinFET devices; NMOS FinFET mobility; PMOS FinFET mobility; mobility enhancements; strained-silicon-on-insulator substrate; Capacitive sensors; Degradation; Etching; FinFETs; Insulation; MOS devices; Piezoresistance; Raman scattering; Silicon on insulator technology; Spectroscopy; FinFET; MOS devices; insulated gate FETs; silicon-on-insulator (SOI) technology; strained-silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.877714

Filename

1644843