Title :
Optically triggered In0.53Ga0.47As-transferred-electron devices for repeater applications
Author :
Hahn, Dietmar ; Hansen, Karsten ; Malacky, Lubomir ; Schlachetzhi, A.
Author_Institution :
Inst. fuer Halbeitertech., Tech. Univ. Braunschweig, Germany
fDate :
12/1/1993 12:00:00 AM
Abstract :
The generation of current pulses in In0.53Ga0.47 As-transfer devices by short optical pulses is demonstrated. The triggering conditions for the generation of single domains are determined with respect to optical peak power, doping concentration, and location of irradiation. The sensitivity and gain of a proposed repeater circuit are calculated
Keywords :
Gunn devices; III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; pulse generators; repeaters; In0.53Ga0.47As; In0.53Ga0.47As transferred electron devices; OEIC; current pulse generation; doping concentration; gain; irradiation location; optical peak power; optical triggering; repeater circuit; sensitivity; short optical pulses; single domain generation; triggering conditions; Circuits; Diode lasers; Electron optics; High speed optical techniques; Integrated optics; Optical devices; Optical pulse shaping; Optical pulses; Repeaters; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
