• DocumentCode
    985639
  • Title

    Moisture Exclusion from Encapsulation of Long-Life Transistors

  • Author

    Cooper, R.I.B.

  • Author_Institution
    Cambridgeshire College of Arts and Technology, Cambridge, England. Formerly with Transistor Div., Standard Telephones and Cables, Ltd., Footscray, Kent, England
  • Volume
    50
  • Issue
    2
  • fYear
    1962
  • Firstpage
    141
  • Lastpage
    147
  • Abstract
    The requirement for long-life transistors places stringent demands on sealing processes. There are empirical reasons for believing that water content is a critical factor and should be preserved at a very low value. The first consequent problem is to design the sealing operation so that the encapsulate is sufficiently dry at the beginning of life. A practicable solution demands the use of moisture getters and the properties and usage of these are compared. The second problem is to reduce later leakage of water vapor into the can to a low level. The radioactive method of leak detection is shown to be the most satisfactory to use for controlling the quality of the high-grade packages required.
  • Keywords
    Encapsulation; Germanium; Gettering; Indium; Leak detection; Moisture; Packaging; Radio control; Switches; Thermionic emission;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IRE
  • Publisher
    ieee
  • ISSN
    0096-8390
  • Type

    jour

  • DOI
    10.1109/JRPROC.1962.287976
  • Filename
    4066622