Title :
Repair technique for phase-shifting masks using silicon-containing resist
Author :
Watanabe, Hiromi ; Sugiura, Emiko ; Imoriya, Tadashi ; Todokoro, Yoshihiro ; Inoue, Morio
Author_Institution :
Kyoto Res. Lab., Matsushita Electron. Corp., Kyoto, Japan
fDate :
12/1/1993 12:00:00 AM
Abstract :
A repair technique for shifter defects on phase shifting masks is described. It is based on the spin-coating of silicon-containing resist on the entire mask, electron beam exposure, and development. The new repair technique is quite simple because it does not require the deposition or removal of shifter materials. Both intrusion and extrusion shifter defects have been successfully repaired
Keywords :
electron beam lithography; electron resists; masks; chemically amplified negative electron beam resist; development; electron beam exposure; extrusion shifter defects; intrusion shifter defects; phase-shifting masks; repair technique; shifter dot defects; shifter pinhole defects; silicon-containing resist; spin-coating; Electron beams; Image restoration; Interference; Ion beams; Lithography; Optical design; Resists; Shape; Sputtering; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
