Integrated self-scanning light-emitting device (SLED)

Author

Ohno, Seiji ; Kusuda, Yukihisa ; Komaba, Nobuyuki ; Kuroda, Yasunao ; Yamashita, Ken ; Tanaka, Shuhei

Author_Institution

Tsukuba Res. Lab., Nippon Sheet Glass Co. Ltd., Ibaraki, Japan

Volume

40

Issue

12

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

2216

Lastpage

2221

Abstract

The fabrication of monolithically integrated self-scanning light-emitting device (SLED) on a GaAs substrate and its performance are described. The SLED consists of integrated light-emitting thyristors whose turn-on voltages interact with each other through coupling diodes or resistors. Light-emitting states are automatically transferred by input clock pulses without using external shift registers. The resistors are made of a Cr-SiO cermet film, and the coupling diodes are made in part with p-n layers of thyristors. The integrated SLED is fabricated in eight photolithographic steps. High-speed operation, more than 10 MHz, can be achieved due to its simple structure and high-density packaging. It is expected that this SLED will be a key device in future large-scale optoelectronic integrated circuits

Keywords

gallium arsenide; integrated circuit technology; integrated optoelectronics; light emitting devices; photolithography; thyristors; 10 MHz; Cr-SiO cermet film; CrSiO; GaAs; GaAs substrate; OEIC; SLED; coupling diodes; coupling resistors; fabrication; high-density packaging; high-speed operation; light-emitting device; light-emitting thyristors; monolithically integrated device; optoelectronic integrated circuits; p-n layers; photolithographic steps; self-scanning; Clocks; Fabrication; Gallium arsenide; Light emitting diodes; Optical coupling; Resistors; Substrates; Superluminescent diodes; Thyristors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.249468

Filename

249468