Title :
HIM0S-a high efficiency flash E2PROM cell for embedded memory applications
Author :
Van Houdt, Jan ; Haspeslagh, Luc ; Wellekens, Dirk ; Deferm, Ludo ; Groeseneken, Guido ; Maes, Herman E.
Author_Institution :
IMEC, Leuven, Belgium
fDate :
12/1/1993 12:00:00 AM
Abstract :
A flash E2PROM device which is programmed with a highly efficient hot-electron injection mechanism is described. This high-injection MOS (HIMOS) device combines a very high programming speed at 5-V-only operation with a low development entry cost, which renders it highly attractive for embedded memory applications. The HIMOS concept exhibits complete soft-write immunity and the possibility of overerasure without causing any problem in a memory architecture. It is shown that this device can also operate with a 3.3-V voltage supply, which is of a major importance for the next generation of submicron flash E2PROM technologies
Keywords :
CMOS integrated circuits; EPROM; PLD programming; circuit reliability; hot carriers; integrated memory circuits; metal-insulator-semiconductor devices; semiconductor storage; 3.3 V; 3.3 V voltage supply; 5 V; 5-V-only operation; CMOS implementation; HIM0S; embedded memory applications; flash E2PROM cell; flash EEPROM; high efficiency; high programming speed; high-injection MOS device; hot-electron injection mechanism; soft-write immunity; submicron technologies; CMOS technology; Costs; Implants; Memory architecture; Nonvolatile memory; PROM; Power supplies; Secondary generated hot electron injection; Split gate flash memory cells; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
