Anomalous behavior of surface leakage currents in heavily doped gated-diodes

Author

Hurkx, Fred ; Peek, Herman L. ; Slotboom, Jan W. ; Windgassen, Rob A.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

Volume

40

Issue

12

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

2273

Lastpage

2281

Abstract

Anomalous voltage and doping dependence of surface leakage currents in heavily doped gated diodes is described and explained. By 2-D numerical device simulations, using a recombination model which includes trap-assisted tunneling, a good quantitative description of surface leakage current is obtained. This has resulted in a revision of the conventional description of these currents. Simple design criteria to avoid excessive surface leakage currents are presented

Keywords

CCD image sensors; electron-hole recombination; heavily doped semiconductors; leakage currents; metal-insulator-semiconductor devices; semiconductor device models; semiconductor diodes; tunnelling; 2D numerical device simulation; CCD image sensor; MOS structures; analytical model; anomalous doping dependence; anomalous voltage dependence; design criteria; heavily doped gated-diodes; recombination model; surface leakage currents; trap-assisted tunneling; Capacitors; Channel bank filters; Charge-coupled image sensors; Current measurement; Doping; Leakage current; Light emitting diodes; Random access memory; Testing; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.249475

Filename

249475