A method of eliminating B-mode dielectric breakdown failure in gate oxides utilizing a charging phenomenon

Author

Ajioka, T. ; Nara, Akihiro ; Tominaga, Yukihiro ; Ushikoshi, Takatoshi ; Kitabayashi, Hironori

Author_Institution

LSI Process. Technol. Center, Oki Electr. Ind. Co. Ltd., Tokyo, Japan

Volume

40

Issue

12

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

2282

Lastpage

2286

Abstract

An investigation of the dielectric breakdown characteristics of charged samples is discussed. B-mode dielectric breakdown failure was eliminated by scrubbing gate oxide films using a brush. Various scrubbing experiments revealed that this occurred due to charging to a voltage close to the intrinsic breakdown voltage of the gate oxide film. Other characteristics such as C-V curves and time-dependent dielectric breakdown characteristics were not degraded by the charging. The method can be of value in the manufacture of reliable oxide films in ULSI

Keywords

VLSI; circuit reliability; electric breakdown of solids; failure analysis; metal-insulator-semiconductor devices; static electrification; surface treatment; B-mode dielectric breakdown failure elimination; C-V curves; MOS capacitors; Si-SiO₂; ULSI; brush scrubber; charging phenomenon; gate oxides; intrinsic breakdown voltage; reliable oxide films; scrubbing; time-dependent dielectric breakdown characteristics; voltage charging; Breakdown voltage; Brushes; Dielectric breakdown; Electric breakdown; Electrodes; Large scale integration; Probes; Semiconductor films; Spinning; Stress;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.249476

Filename

249476