Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJT´s by means of a nonlocal analytical model for the avalanche multiplication factor

Author

Verzellesi, Giovanni ; Baccarani, Giorgio ; Canali, Claudio ; Pavan, Paolo ; Vendrame, Loris ; Zanoni, Enrico

Author_Institution

Dipartimento di Elettronica e Inf., Padova Univ., Italy

Volume

40

Issue

12

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

2296

Lastpage

2300

Abstract

The authors point out that when a triangular shape for the electric field in the base-collector space-charge region of an n-p-n Si BJT (bipolar junction transistor) is assumed, the electron mean energy can be calculated analytically from a simplified energy-balance equation. On this basis a nonlocal-impact-ionization model, suitable for computer-aided circuit simulation, has been obtained and used to calculate the output characteristics at constant emitter-base voltage (grounded base) of advanced devices. Provided the experimental bias-dependent value of the base parasitic resistance is accounted for in the device model, the base-collector voltage at which impact-ionization-induced snap-back occurs can be accurately predicted

Keywords

bipolar transistors; impact ionisation; semiconductor device models; Si; avalanche multiplication factor; base parasitic resistance; base-collector space-charge region; base-collector voltage; bipolar junction transistor; computer-aided circuit simulation; constant emitter-base voltage; electron mean energy; energy-balance equation; impact-ionization-induced snap-back; n-p-n Si BJT; nonlocal analytical model; output characteristics; triangular shape electric field; Analytical models; Bipolar transistors; Circuit simulation; Electrons; Equations; Impact ionization; Irrigation; Predictive models; Shape; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.249478

Filename

249478