Title :
Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJT´s by means of a nonlocal analytical model for the avalanche multiplication factor
Author :
Verzellesi, Giovanni ; Baccarani, Giorgio ; Canali, Claudio ; Pavan, Paolo ; Vendrame, Loris ; Zanoni, Enrico
Author_Institution :
Dipartimento di Elettronica e Inf., Padova Univ., Italy
fDate :
12/1/1993 12:00:00 AM
Abstract :
The authors point out that when a triangular shape for the electric field in the base-collector space-charge region of an n-p-n Si BJT (bipolar junction transistor) is assumed, the electron mean energy can be calculated analytically from a simplified energy-balance equation. On this basis a nonlocal-impact-ionization model, suitable for computer-aided circuit simulation, has been obtained and used to calculate the output characteristics at constant emitter-base voltage (grounded base) of advanced devices. Provided the experimental bias-dependent value of the base parasitic resistance is accounted for in the device model, the base-collector voltage at which impact-ionization-induced snap-back occurs can be accurately predicted
Keywords :
bipolar transistors; impact ionisation; semiconductor device models; Si; avalanche multiplication factor; base parasitic resistance; base-collector space-charge region; base-collector voltage; bipolar junction transistor; computer-aided circuit simulation; constant emitter-base voltage; electron mean energy; energy-balance equation; impact-ionization-induced snap-back; n-p-n Si BJT; nonlocal analytical model; output characteristics; triangular shape electric field; Analytical models; Bipolar transistors; Circuit simulation; Electrons; Equations; Impact ionization; Irrigation; Predictive models; Shape; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
