A low-power high-performance SiGe BiCMOS 802.11a/b/g transceiver IC for cellular and bluetooth Co-existence applications

Author

Charlon, Olivier ; Locher, Matthias ; Visser, Hendrik Arend ; Duperray, David ; Chen, Jennie ; Judson, Marc ; Landesman, Alan L. ; Hritz, C. ; Kohlschuetter, Ulrich ; Zhang, Yifeng ; Ramesh, C. ; Daanen, Anton ; Gao, Minzhan ; Haas, S. ; Maheshwari, Vijay

Author_Institution

Philips Semicond., San Jose, CA

Volume

41

Issue

7

fYear

2006

fDate

7/1/2006 12:00:00 AM

Firstpage

1503

Lastpage

1512

Abstract

This paper describes a high-performance WLAN 802.11a/b/g radio transceiver, optimized for low-power in mobile applications, and for co-existence with cellular and Bluetooth systems in the same terminal. The direct-conversion transceiver architecture is optimized in each mode for low-power operation without compromising the challenging RF performance targets. A key transceiver requirement is a sensitivity of -77 dBm (at the LNA input) in 54 Mb/s OFDM mode while in the presence of a GSM1900 transmitter interferer. The receiver chain achieves an overall noise figure of 2.8/3.2 dB, consuming 168/185 mW at 2.8 V for the 2.4/5GHz bands, respectively. Signal loopback and transmit power detection techniques are used in conjunction with the baseband modem processor to calibrate the transmitter LO leakage and the transceiver I/Q imbalances. Fabricated in a 70 GHz f_T 0.25-mum SiGe BiCMOS technology for system-in-package (SiP) use, the dual-band, tri-mode transceiver occupies only 4.6 mm²

Keywords

BiCMOS integrated circuits; Bluetooth; Ge-Si alloys; IEEE standards; cellular radio; low-power electronics; system-in-package; transceivers; 0.25 micron; 168 mW; 185 mW; 2.4 GHz; 2.8 V; 2.8 dB; 3.2 dB; 5 GHz; 70 GHz; BiCMOS transceiver IC; Bluetooth systems; GSM1900 transmitter interferer; SiGe; baseband modem; calibration; cellular systems; direct-conversion transceiver architecture; low-power operation; radio transceiver; signal loopback technique; system-in-package; transmit power detection technique; Application specific integrated circuits; BiCMOS integrated circuits; Bluetooth; Germanium silicon alloys; OFDM; Radio frequency; Radio transceivers; Radio transmitters; Silicon germanium; Wireless LAN; BiCMOS integrated circuits; Bluetooth; IEEE 802.11a; IEEE 802.11b; IEEE 802.11g; OFDM; RF transceiver; calibration; cellular radio; frequency synthesis; interference; wireless LAN;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2006.873933

Filename

1644859