• DocumentCode
    985792
  • Title

    Au-Mg improved ohmic contacts to p-GaAs

  • Author

    Papanicolaou, N.A. ; Christou, Alex

  • Author_Institution
    Naval Research Laboratory, Washington, USA
  • Volume
    19
  • Issue
    11
  • fYear
    1983
  • Firstpage
    418
  • Lastpage
    420
  • Abstract
    A novel ohmic contact alloy to p-GaAs consisting of 96 weight % Au and 4 weight % Mg, a Mo barrier metal and Au overlay is described. Contact resistivities as low as 8 × 10¿5 cm2 were achieved on heavily doped substrates. Auger sputter profiles have shown these contacts to be thermally stable up to 450°C.
  • Keywords
    III-V semiconductors; gallium arsenide; gold alloys; magnesium alloys; ohmic contacts; Au overlay; Au-Mg; Auger sputter profiles; III-V semiconductors; Mo barrier metal; contact resistivity; heavily doped substrates; ohmic contact alloy; p-GaAs; thermal stability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830287
  • Filename
    4247750
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=985792