Title :
A cellular-band CDMA 0.25-/spl mu/m CMOS LNA linearized using active post-distortion
Author :
Kim, Namsoo ; Aparin, Vladimir ; Barnett, Kenneth ; Persico, Charles
Author_Institution :
Qualcomm, San Diego, CA
fDate :
7/1/2006 12:00:00 AM
Abstract :
The theory of a linearization method using active post-distortion (APD) is explained for low-frequency and high-frequency applications. The low-frequency cancellation is explained in power series format and the high-frequency cancellation is explained in Volterra series format. The method is utilized for a cellular band (869-894 MHz) CDMA low-noise amplifier (LNA), which is implemented in 0.25-mum CMOS process. The LNA achieves 1.2 dB NF, 16.2 dB power gain, and +8 dBm IIP3 while consuming 12 mA current from 2.6 V supply voltage. It shows 13.5 dB of IM3 product reduction with 0.15 dB NF penalty in comparison with an LNA which does not use the APD method
Keywords :
CMOS integrated circuits; Volterra series; cellular radio; code division multiple access; intermodulation distortion; linearisation techniques; low noise amplifiers; 0.15 dB; 0.25 micron; 1.2 dB; 12 mA; 16.2 dB; 2.6 V; 869 to 894 MHz; CDMA low-noise amplifier; CMOS process; IM3 cancellation; Volterra series format; active post-distortion; cellular band CDMA; high-frequency cancellation; linearization method; low-frequency cancellation; power series format; CMOS technology; FETs; Linearity; Low-noise amplifiers; Multiaccess communication; Noise measurement; Signal to noise ratio; Transconductance; Voltage; Voltage-controlled oscillators; IM3 cancellation; RF CMOS; linearity; low-noise amplifier (LNA);
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2006.873909
