Title :
New approach to the manufacture of low-threshold 1.5 ¿m distributed feedback lasers
Author :
Westbrook, L.D. ; Nelson, A.W. ; Dix, C.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
Low-threshold-current (85 mA), oxide isolated InGaAsP/InP distributed feedback (DFB) lasers operating at a wavelength of ¿ = 1.5 ¿m have been produced for the first time using electron-beam-written DFB corrugations overgrown by MOCVD. The control and flexibility afforded by these techniques considerably ease the complexity of DFB laser manufacture.
Keywords :
III-V semiconductors; chemical vapour deposition; distributed feedback lasers; electron beam lithography; gallium arsenide; indium compounds; p-n heterojunctions; semiconductor junction lasers; 1.5 micron wavelength; DFB laser manufacture; III-V semiconductors; InGaAsP/InP; MOCVD; corrugations; distributed feedback lasers; electron beam lithography; heterojunction device; oxide isolated; semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830290
