Title :
Numerical analysis of electric field profiles in high-voltage GaAs photoconductive switches and comparison to experiment
Author :
Kingsley, Lawrence E. ; Donaldson, William R.
Author_Institution :
Pulse Power Center, US Army Res. Lab., Fort Monmouth, NJ, USA
fDate :
12/1/1993 12:00:00 AM
Abstract :
The electric field in GaAs photoconductive switches has been observed with an ultrafast electro-optic imaging system to develop complex spatial and temporal structure immediately after illumination. High-field domains form at the switch cathode as the photogenerated carriers recombine for bias fields above ~10 kV/cm. At these biases, the switch also remained conductive for a much longer time (~100 ns) than the material recombination time (~1 ns). A model which includes field-dependent mobility was developed to explain this data. Simulation of the electric field profile across the switch indicates that high-field domains which form at the switch cathode are the result of negative differential resistance
Keywords :
III-V semiconductors; carrier mobility; electric fields; electron-hole recombination; gallium arsenide; negative resistance; numerical analysis; photoconducting devices; semiconductor device models; semiconductor switches; 100 ns; GaAs; bias fields; electric field profiles; field-dependent mobility; high-field domains; high-voltage GaAs photoconductive switches; material recombination time; model; negative differential resistance; numerical analysis; numerical simulation; photogenerated carrier recombination; spatial structure; switch cathode; temporal structure; ultrafast electro-optic imaging system; Cathodes; Gallium arsenide; Gunn devices; Laboratories; Laser modes; Numerical analysis; Optical pulses; Optical switches; Photoconductivity; Zero voltage switching;
Journal_Title :
Electron Devices, IEEE Transactions on
