Title :
Modes of operation in dual-gate MESFET mixers
Author :
Ashoka, H. ; Tucker, R.S.
Author_Institution :
University of Queensland, Department of Electrical Engineering, Brisbane, Australia
Abstract :
The mechanisms of mixing in a dual-gate GaAs MESFET mixer are described. Based on a cascode DC model of the device, several modes of mixer operation are identified. It is shown that each single-gate MESFET in the cascode model can operate as a mixer or amplifier, depending on the DC bias conditions and mixer configuration.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; mixers (circuits); semiconductor device models; DC bias conditions; GaAS; III-V semiconductors; amplifier; cascode DC model; dual-gate MESFET mixers; operational modes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830293
