DocumentCode
985856
Title
A self-aligned lateral bipolar transistor realized on SIMOX-material
Author
Edholm, B. ; Olsson, Jörgen ; Söderbärg, Anders
Author_Institution
Dept. of Technol., Uppsala Univ., Sweden
Volume
40
Issue
12
fYear
1993
fDate
12/1/1993 12:00:00 AM
Firstpage
2359
Lastpage
2360
Abstract
Lateral bipolar transistors, compatible with a CMOS process on SOI, have been fabricated on high quality SIMOX material. A self-aligned nitride spacer technique is used for base width definition and for emitter alignment. Current gains of 40 and high collector-emitter breakdown voltages have been obtained for transistors with base widths of 4000 Å
Keywords
BiCMOS integrated circuits; SIMOX; bipolar transistors; 4000 angstrom; BiCMOS integration; CMOS process compatibility; SIMOX material; Si-Si3N4-SiO2; base width; base width definition; current gain; emitter alignment; high collector-emitter breakdown voltages; self-aligned lateral bipolar transistor; self-aligned nitride spacer; BiCMOS integrated circuits; Bipolar transistors; CMOS process; CMOS technology; Integrated circuit technology; Manufacturing; Process control; Robust control; Semiconductor films; Silicon on insulator technology;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.249487
Filename
249487
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